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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1478 DESCRIPTION *High DC Current Gain: hFE = 2000(Min)@ IC= -2A *Low Collector Saturation Voltage: VCE(sat) = -2.0V(Max.) @IC= 5A *Complement to Type 2SD2237 APPLICATIONS *Designed for power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage w ww scs .i VALUE -100 V -100 V -5 V -8 A 60 W UNIT .cn mi e VEBO Emitter-Base Voltage IC Collector Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature PC Tj 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB1478 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA, IB= 0 -100 V V(BR)CBO Collector-Base Breakdown Voltage IC= -50A; IE=0 -100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -2mA; IC=0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A, IB= -20mA B -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -5A, IB= -20mA B ICBO Collector Cutoff current IEBO Emitter Cutoff current hFE DC Current Gain w w w. sem isc VCB= -100V, IE= 0 VEB= -5V, IC= 0 IC= -2A; VCE= -3V .cn i 2000 -2.5 V -10 A -2 mA 20000 isc Websitewww.iscsemi.cn |
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